Cr-doped TiO2 thin films deposited by RF-sputtering

Cr-doped TiO₂ thin films with different band gaps were prepared. Higher Cr doping was beneficial to the formation of the rutile-TiO₂ phase over the anatase-TiO₂ phase. A 4.8% Cr-doped thin film indicated a band gap of 2.95 eV, which was lower than the band gap of the rutile-TiO₂. Cr doping was accompanied by the formation of not only the rutile-TiO₂ phase but also the Cr₂O₃ phase, lead to the degradation of the hydrophilicity. The TiO₂ thin films with the mixed phase were not desirable to improve the hydrophilicity.