基于聚合物电介质的并五苯场效应晶体管

采用顶接触结构分别在SiO2、聚甲基丙烯酸甲酯(PMMA)绝缘层上制备了以并五苯为有源层的两种有机场效应晶体管(OFET),其中SiO2绝缘层采用热生长法制备,PMMA绝缘层采用溶液旋涂法制备。与常规基于无机绝缘层的器件相比,采用聚合物为绝缘层后,不但器件的制作工艺简化和成本降低,而且器件性能大幅提高,经测试,器件的迁移率提到0.153cm2/Vs,而阈值电压降低6V。采用原子力显微镜(AFM)、X射线衍射(XRD)等对器件性能提高的原因进行了详细分析。

Pentacene field-effect transistors based on polymer dielectric

Pentacene field-effect transistor(OFET) was fabricated with silicon oxide(SiO2) or poly-methylmethacrylate(PMMA) as the gate insulator.The SiO2 insulator was fabricated with thermally grown method,and the PMMA was fabricated by solution-casting method.Comparing with traditional OFETs which have inorganic insulator,the transistor with PMMA dielectric can have advantage in easily making films by solution-processing with low cost,and it can improve the performance of transistors obviously.Then,OFET can be oper...