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Subsolidus Phase Relations in the Ga2O3-In2O3-SnO2 System
Authors:Doreen D Edwards  Thomas O Mason
Affiliation:Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
Abstract:Subsolidus phase relationships in the Ga2O3–In2O3–SnO2 system were studied by X-ray diffraction over the temperature range 1250–1400°C. At 1250°C, several phases are stable in the ternary system, including Ga2O3( ss ), In2O3( ss ), SnO2, Ga3? x In5+ x Sn2O16, and several intergrowth phases that can be expressed as Ga4?4 x In4 x Sn n ?4O2 n ?2 where n is an integer. An In2O3–SnO2 phase and Ga4SnO8 form at 1375°C but are not stable at 1250°C. GaInO3 did not form over the temperature range 1000–1400°C.
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