Electronic Properties of C60 Thin Films |
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| Authors: | B Mishori E A Katz D Faiman A Belu-Marian Yoram Shapira |
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| Affiliation: |
a Department of Electrical Engineering - Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv, Israel
b The National Solar Energy Center, the Jacob Blaustein Institute for Desert Research, Sede Boqer, Israel
c Department of Physics, the Ben-Gurion University of the Negev, Beersheba, Israel
d Institute of Physics and Technology of Materials, Bucharest, Romania |
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| Abstract: | The electronic structure of polycrystalline C60 thin films has been investigated using surface photovoltage spectroscopy (SPS) and conductivity measurements. the films show n-type semiconductivity with an activation energy of ～ 0.8 eV as found from the temperature dependence of the conductivity at high temperatures. the electronic structure emerging from our SPS results comprises a 1.6 eV photo-conduction gap, a mobility gap of about 2.25 eV and two gap states, a donor and an acceptor, at 0.35 eV and (1.0-1.1) eV, respectively, below the photo-conduction edge. the results indicate the possibility of the existence of band tails, extending into the optical gap of these films, as well as other deep gap states. |
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