Oxygen at the interface of CVD diamond films on silicon |
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| Affiliation: | 1. School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai, 201418, China;2. State Key Laboratory of Chemical Engineering, East China University of Science and Technology, Shanghai, 200237, China;1. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;2. Center for High Pressure Science & Technology Advanced Research (HPSTAR), China;3. School of Physical Engineering, Zhengzhou University, Zhengzhou, Henan 450052, China;4. Department of Earth and Planetary Sciences, Northwestern University, Evanston, IL 60208, USA;5. School of Electronical and Information Engineering, Yangtze Normal University, Chongqing, China;1. Institute of Applied Laser, Photonics and Surface Technologies, Bern University of Applied Sciences, Quellgasse 21, 2502 Biel, Switzerland;2. LAboratoire PLAsma et Conversion de l''Energie, LAPLACE, Université de Toulouse, CNRS, INPT, UPS, 118 route de Narbonne, 31062 Toulouse Cedex 9, France;3. Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, 3602 Thun, Switzerland |
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| Abstract: | The oxygen incorporation at the interface between the silicon substrate and chemical vapour deposited (CVD) diamond films nucleated by the bias-enhanced nucleation (BEN) procedure has been studied by heavy-ion elastic recoil detection (ERD). Using standard process conditions for the realisation of heteroepitaxial films, oxygen with a concentration equivalent to about 1 nm SiO2 has been found, which was mainly incorporated during textured growth with a certain CO2 admixture to the process gas. By completely omitting CO2 during nucleation and growth, the oxygen at the interface can be reduced by nearly one order of magnitude to 6.3×1015 at cm−2, corresponding to 0.14 nm SiO2. Intentional addition of highly enriched C18O2 to the gas phase shows that the oxygen incorporation is strongly enhanced during BEN with hydrocarbon in the gas phase. The results indicate that roughening of the surface, the deposition of SixOyCz phases and strong lateral inhomogeneities at the silicon interface may explain the coexistence of epitaxial crystallites and amorphous phases. It is suggested that a further reduction of the oxygen concentration at the interface may have consequences for an improved heteroepitaxy of diamond on silicon. |
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