Application-relevant characterization of magnetron-sputtered carbon nitride films |
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| Affiliation: | 1. School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China;2. School of Materials Science and Engineering, Northwestern Polytechnical University, Xi''an, 710072, China;3. Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA;1. Institute of Materials Engineering, ANSTO, Locked Bag 2001, Kirrawee DC, New South Wales 2232, Australia;2. Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168, Australia;3. Plasma Research Laboratory, Research School of Physics and Engineering, Australian National University, Canberra 0200, Australia |
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| Abstract: | Carbon nitride (CNx) films were deposited onto Si substrates by radio frequency magnetron sputtering at nitrogen pressures up to 0.3 Pa (the resulting nitrogen concentration ranged from 32 to 41%). Their optical properties, structure and bonding were characterized by spectroscopic ellipsometry, X-ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy and scanning electron microscopy. The films exhibit a behavior typical for disordered systems, and no known C3N4 structure was identified. A pronounced effect of the nitrogen partial pressure is found for the low pressure region. The presence of various types of CN bond, as well as of hydrogen and oxygen, is revealed. The complementarity of information inferred from Raman and IR spectra is discussed. |
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