Focused ion beam patterning of diamondlike carbon films |
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| Affiliation: | 1. Defence Metallurgical Research Laboratory, Hyderabad 500058, India;2. Institute for Nanomaterials, Advanced Technologies and Innovation, Department of Natural Sciences, Technical University of Liberec, Studentská 1402/2, Liberec 1, 461 17, Czech Republic;3. Department of Physics, National Taiwan University, Taipei 106, Taiwan;1. Department of Physics, University of Helsinki, P.O. Box 43, Helsinki FI-00014, Finland;2. School of Computing and Engineering, University of Huddersfield, Huddersfield HD1 3DH, UK;3. School of Computing, Science and Engineering, University of Salford, Manchester M5 4WT, UK;1. Centre for Functional and Surface Functionalized Glass, Alexander Dubček University of Trenčín, Trenčín, Slovakia;2. Joint Glass Centre of the IIC SAS, TnUAD, and FChPT STU, Trenčín, Slovakia;1. Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina;2. Universidad Nacional de Córdoba. Facultad de Matemática, Astronomía, Física y Computación, Ciudad Universitaria, 5000, Córdoba, Argentina;3. Instituto de Física Enrique Gaviola – CONICET, Córdoba, Argentina;4. Centro Atómico Bariloche, Comisión Nacional de Energía Atómica – Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400, San Carlos de Bariloche, Argentina;1. Department of Physics, Malaviya National Institute of Technology Jaipur, JLN Marg, Malviya Nagar, 302017, Jaipur, Rajasthan, India;2. Department of Physics, Kurukshetra University, Kurukshetra, Haryana, 136119, India;3. Department of Physics, The LNM Institute of Information Technology, Jaipur, 302031, India;4. CSNSM, IN2P3-CNRS, Batiment 108, F-91405, Orsay Campus, France |
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| Abstract: | For applications of diamondlike carbon films in optics, microelectronics and other fields, it is in some cases necessary to form submicron size patterns. A finely focused beam of 50 keV Ga+ ions was used to mill various patterns in amorphous carbon films prepared by a pulsed cathodic arc discharge method. The trenches with width down to 30 nm and depth-to-width ratios up to 25 have been milled. The minimum trench width down to 20 nm has been achieved. The nanotips with a radius down to 35–40 nm were fabricated. The influence of the focused ion beam parameters on the film's surface modification as well as on the shape of fabricated pattern elements is discussed. |
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