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Influence of UV-laser radiation on the synthesis of DLC films by ECR-plasma-CVD
Affiliation:1. Instituto Nacional de Pesquisas Espaciais (INPE), Laboratório Associado de Sensores e Materiais (LABAS), Avenida dos Astronautas 1758 - São José dos Campos, 12227-010, SP, Brazil;2. Universidad Nacional de Colombia, Facultad de Ciencias, Departamento de Física, Carrera 45, N. 26-85-Edificio Uriel Gutiérrez, Bogotá D.C., Colombia;1. Center for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom;2. Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom;3. Element-Six Technologies, Santa Clara, CA 95054, USA
Abstract:Simultaneous UV-laser irradiation during the deposition of DLC films has been found to significantly influence the growth process and to favourably modify the film properties. The influence of the spectral and energetic parameters of laser radiation was investigated with respect to the optical, structural and mechanical properties of DLC films. Detailed investigations on the mechanism of laser-induced structural transformations in DLC films are presented, as studied by Raman spectroscopy. Further, the characteristic peak for the nanocrystalline diamond phase at 1140 cm−1 was evident for irradiated films. Noteworthy is the increase in film microhardness with increasing energy of the deposited carbon ions with a simultaneous reduction in internal stresses, caused by photolytically induced modification of the film structure by UV-laser radiation. As a result, hard (up to 30 GPa) and thick (up to 3 μm) defect-free DLC films without cracks have been synthesized.
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