Properties of CNx films prepared by PECVD |
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| Affiliation: | 1. School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China;2. School of Materials Science and Engineering, Northwestern Polytechnical University, Xi''an, 710072, China;3. Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA;1. School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, PR China;2. Ningbo Key Laboratory of Marine Protection Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, PR China |
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| Abstract: | For this project, CNx films were prepared by the plasma-enhanced chemical vapour deposition (PECVD) method. Two kinds of substrate were chosen for film deposition: Cr–Ni–Mo steel (0.095 C, 17.25 Cr, 12.04 Ni, 2.49 Mo) and silicon. The substrates were prepared in the shape and size needed for the planned measurements. The surfaces for film deposition were polished and the substrates cleaned in organic solvents by means of ultrasound before treatment. The following CNx film properties were investigated: thickness, internal stress, dependence of the friction coefficient on the load, refraction index and contamination. For the investigation of these properties the following methods or instruments were chosen: Talystep profilometer, the optical method of stress measurement based on macroscopic sample bending, tribometer HEF, ellipsometry, Rutherford backscattering spectroscopy (RBS) and electron probe microanalysis (EPMA). The thickness values fell in the range of hundredths of nanometres. The compressive stress of the films was below 0.8 GPa. The friction coefficient decreased when the load value increased. There was remarkable oxygen contamination in the prepared films. |
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