Synthesis of adhesive c-BN films in pure nitrogen radio-frequency plasma |
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Affiliation: | 1. Faculty of Physics, Taras Shevchenko National University of Kyiv, 4 Hlushkov Ave., Kiev 03187, Ukraine;2. Science and Research Centre “Synthesis”, Kiev 02139, Ukraine;3. Institute for Materials Research and Engineering, University of Huddersfield, HD1 3DH, UK |
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Abstract: | Cubic boron nitride (c-BN) thin films were prepared at 600 °C by radio-frequency (rf) plasma pulsed laser deposition. All c-BN films prepared in Ar-rich plasma have poor adhesion on Si(100) substrates, but those prepared in pure N2 plasma can be maintained for more than 5 months without degradation. However, an increase of ion flux at an ion energy similar to that of pure N2 plasma results in the peeling of c-BN films. Thus, application of pure N2 plasma with suppressed ion flux can improve c-BN film adhesion. Under such conditions, an extended sp2-bonded interlayer is suspected, with the onset of the c-BN phase being delayed. Suppression of radiative damage in reduced nitrogen ion flux on both the c-BN and h-BN/t-BN phases are important for the adhesive of c-BN films. |
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