The analysis of leakage current in MIS Au/SiO2/n-GaAs at room temperature

The aim of this study is to determine the reverse-bias leakage current conduction mechanisms in Au/SiO₂/n-GaAs metal-insulator-semiconductor type Schottky contacts. Reverse-bias current-voltage measurements (I–V) were performed at room temperature. The using of leakage current values in SiO₂ at electric fields of 1.46–3.53 MV/cm, ln(J/E) vs. $\sqrt E $ graph showed good linearity. Rom this plot, dielectric constant of SiO₂ was calculated as 3.7 and this value is perfect agreement with 3.9 which is value of SiO₂ dielectric constant. This indicates, Poole-Frenkel type emission mechanism is dominant in this field region. On the other hand, electric fields between 0.06–0.73 and 0.79–1.45 MV/cm, dominant leakage current mechanisms were found as ohmic type conduction and space charge limited conduction, respectively.