Investigation of amorphous Ni0.60Nb0.40 diffusion barriers

Interactions of Ni_0.60Nb_0.40 amorphous alloys with polycrystalline overlayers of gold and copper and single-crystal substrates of silicon. GaAs and GaP were observed with Auger depth profiling. The Ni-Nb layer was deposited by r.f. sputtering and was approximately 5000 Å thick. The overlayers were evaporated to a thickness of 1000 Å. The amorphous metal reacted with the gold overlayers and the GaAs and GaP substrates at temperatures well below the nominal crystallization temperature of 650 °C. The Cu/Ni-Nb/Si system, in contrast, was stable at 600 °C for at least 1 h. Samples were also measured that had been contaminated with approximately 5–10 at.% O. Complete separation of the niobium and nickel into distinct layers was seen. For the samples on silicon substrates this separation was accompanied by the formation of a nickel silicide layer.