Densification of In2O3:Sn multilayered films elaborated by the dip-coating sol-gel route |
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| Authors: | K Daoudi B CanutM.G Blanchin C.S SanduV.S Teodorescu J.A Roger |
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| Affiliation: | a Laboratoire de Physique de la Matière Condensée et Nanostructures-UMR CNRS 5586, Université Claude Bernard, Lyon 1, 43 Bd du 11 novembre 1918, 69622 Villeurbanne Cedex, France
b National Institute for Material Physics, P.O. Box Mg-7, Str. Atomistilor 105bis, Bucharest-Magurele, R-76900, Romania |
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| Abstract: | Indium Tin Oxide (ITO) thin films have been deposited by the Sol-Gel Dip-Coating technique, the starting solutions being prepared from chlorides. These multilayered films were crystallized by means of a classical heat treatment at temperatures ranging from 500 to 600 °C. Five stacked layers are necessary to obtain a global electrical resistivity value of 2.9×10−3 Ω cm, for 500 °C annealed film. The paper focuses on the study of the structure of such multilayered deposits, and on the densification process, using transmission electron microscopy, Rutherford Back-scattering Spectrometry and electrical resistivity measurements. This analysis reveals structural inhomogeneities and different crystallite growth processes as a function of annealing temperature and number of deposited layers. |
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| Keywords: | Transmission electron microscopy Indium oxide Sol-gel multilayers |
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