Microstructural and transport properties of LaNiO3−δ films grown on Si (111) by chemical solution deposition |
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Authors: | MT Escote FM PontesER Leite JA VarelaRF Jardim E Longo |
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Affiliation: | a LIEC, CMDMC, Departamento de Qu?́mica, UFSCar, Rod. Washington Luiz, km 235, CP 676, São Carlos, SP CEP 13565-905, Brazil b Instituto de F?́sica, Universidade de São Paulo, CP 66318, São Paulo, SP CEP 05315-970, Brazil c Instituto de Qu?́mica, UNESP, CP 353, Araraquara, SP CEP 14801-970, Brazil |
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Abstract: | Electrically conductive LaNiO3−δ (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 °C. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity ρ(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The ρ(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices. |
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Keywords: | Thin films Electrical properties Chemical solution deposition Atomic force microscopy (AFM) |
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