Ion deposition in a crossed E×B field system with vacuum arc plasma sources

The system with crossed magnetic and electric fields and vacuum arc plasma sources for ion deposition and low-voltage plasma treatment and plasma immersion ion implantation has been investigated. The use of crossed E×B fields provides intense gas ionization and suppresses sheath expansion. Maximum deposition rate of about 1 μm min⁻¹ was obtained on the target surface located under the area where intense ionization of reactive gas occurs (circular area of about 40 mm wide around the target). Without magnetic field the maximum rate of only 0.15 μm min⁻¹ can be achieved. In the crossed E×B fields, high-quality dense TiN coating was obtained. High ion current density to the target surface reaches 500 A m⁻², provides effective cleaning of the target surface and heating of the growing film. The ratio of metal plasma current and reactive gas ion current reaches 2.1 and can be easily changed by adjusting the magnetic field strength, without changing the vacuum arc gun current. The uniform film deposition around circumference of the target is provided as a result of ion magnetization in the crossed field zone. The uniform film deposition along the entire target length can be provided by moving magnetic field up and down.