Preparation and characterization of highly (1 1 1)-oriented (Pb,La)(Zr,Ti)O3 thin films by sol-gel processing |
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Authors: | XG Tang AL Ding Y Ye WX Chen |
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Affiliation: | The State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, PR China |
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Abstract: | Lanthanum modified lead zirconate titanate (Pb0.91La0.09)(Zr0.65Ti0.35)O3 (PLZT) ferroelectric thin films were grown on Pt/Ti/SiO2/Si(1 0 0) and fused quartz substrates using a sol-gel method with rapid thermal annealing processing. The results showed that the highly (1 1 1)-oriented pervoskite PLZT thin film growth on Pt/Ti/SiO2/Si(1 0 0) substrates. The electrical measurements were conducted on PLZT films in metal-ferroelectric-metal capacitor configuration. The PLZT thin films annealed at 600 °C showed well-saturated hysteresis loops with remanent polarization and coercive electric field values were 10.3 μC/cm2 and 36 kV/cm, respectively, at an applied field of 300 kV/cm. At 100 kHz, the dielectric constant and dielectric loss of the film are 682 and 0.021, respectively. The PLZT thin film on fused quartz substrate, annealed at 600 °C, exhibited good optical transmittance, the band gap of optical direct transitions is 3.89 eV. |
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Keywords: | 77 80 -e 68 55 -a 77 22 C |
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