On the correlation between morphology and electronic properties of copper phthalocyanine (CuPc) thin films |
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| Authors: | L. Grz?dzielJ. ?ak J. Szuber |
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| Affiliation: | a Department of Microelectronics, Silesian University of Technology, Gliwice 44-100, Poland
b Department of Physical Chemistry and Technology of Polymers, Silesian University of Technology, Gliwice 44-100, Poland |
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| Abstract: | The morphology of vacuum deposited copper phthalocyanine (CuPc) thin films surface deposited on Si(111) have been studied using the contact mode Atomic Force Microscope (AFM). The influence of substrate temperature during deposition and of the post-deposition UHV annealing on surface roughness as well as on the average and maximum grain height was determined. The observed changes of surface morphology were in a good correlation with the shift of surface Fermi level position in the band gap after O2 exposure determined in our recent photoemission studies. |
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| Keywords: | Copper phthalocyanine Thin films Photoemission Atomic force microscope |
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