Mo/Si multilayers for EUV lithography by ion beam sputter deposition

Mo/Si multilayers for applications in extreme ultraviolet (EUV) lithography have been prepared on Si wafer substrates using ion beam deposition. The multilayers were characterised by transmission electron microscopy, secondary ion mass spectroscopy, atomic force microscopy, photoelectron spectroscopy, X-ray reflectometry at grazing incidence, and EUV-reflectivity measurements at nearly normal incidence. The surface and the interfaces of the multilayers are rather smooth with only small roughness. The material properties of the layers are characterised by some intermixing and silicide formation at the Mo-Si interfaces and a polycrystalline grain structure of the Mo layers, which is in agreement with prior studies. Appearance of multilayer diffraction spots, well-resolved Kiessig fringes and other diffraction evidence indicate very good coherence of the wave fields and in this manner a good reproducibility of the multilayer period of 6.7 nm. Normal incidence peak reflectivities of 64-65% in the EUV spectral range were routinely obtained at 13.4 nm wavelength. This reflectivity value and the formation of an EUV standing wave field are confirmed using photoelectron spectroscopy, and an application for defect particle analysis is proposed. The obtained results are discussed in comparison to literature data of multilayers prepared by other deposition techniques and considering new attempts of interface engineering.