Study on In2O3-SnO2 transparent and conductive films prepared by d.c. sputtering using high density ceramic targets

The influence of SnO₂ concentration in the target on the film characteristics was studied in order to make the useful database for the device design when low discharge voltage sputtering method and a high density In₂O₃-SnO₂ ceramic targets were used. In the case of the films deposited on unheated substrate, X-ray diffraction profile showed amorphous structure. Minimum resistivity of 358 μΩ cm was obtained by In₂O₃ film with mobility of 40.1 cm² (V s)⁻¹ and carrier density of 4.35E+20 cm⁻³. With the increase of SnO₂ contents, resistivity of the films increased because of the decrease in both carrier density and mobility. Whereas, the films deposited on heated substrates showed polycrystalline structure. Resistivity was reduced, ranging from 5 to 20 wt.% SnO₂, and minimum resistivity of 136 μΩ cm was obtained at 15 wt.% with mobility of 40.5 cm² (V s)⁻¹ and carrier density of 1.13E+21 cm⁻³. Transmittance and reflectance of these films strongly depend on carrier density.