A novel microsensor fabricated with charge-flow transistor and a Langmuir-Blodgett organic semiconductor film |
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| Authors: | Dan Xie Yadong JiangWei Pan Yanrong Li |
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| Affiliation: | a State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, PR China
b Department of Materials Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, PR China |
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| Abstract: | Microsensor for nitrogen dioxide (NO2) fabricated by Langmuir-Boldgett (LB) films of Samarium bis[2,3,9,10,16,17,23,24-octakis(octyloxy)phthalocyaninato] complex Sm[Pc*]2 (Pc*=Pc(OC8H17)8) and charge-flow transistor (CFT) are evaluated. Pure Sm[Pc*]2 and mixture of Sm[Pc*]2 and octadecanol (OA) deposited from both pure water and 10−4 M Cd2+ subphases were investigated. It is found that a mixture of 1:3 Sm[Pc*]2:OA forms an excellent material for the fabrication of gas-sensing LB film by studying the film-forming characteristic. Such novel microsensor has been fabricated by incorporating the multilayer LB film into the gate electrode of a metal-oxide-semiconductor field effect transistor, forming an array of CFT. On the application of a gate voltage (VGS), greater than the threshold voltage (VTH), a delay was observed in the response of the drain current. It is due to the time taken for the resistive gas-sensing film to charge up to VGS. This delay characteristic was found to depend on the concentration of NO2. Results are presented showing that the device can detect reversibly concentration of NO2 gas down to 5 ppm at room temperature. |
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| Keywords: | Gas sensor Charge-flow transistor MOSFET Nitrogen dioxide Langmuir-Blodgett Films Bis[phthalocyaninato] complex |
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