Correlations between substrate bias, microstructure and surface morphology of tetrahedral amorphous carbon films |
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Authors: | Jiaqi Zhu Jiecai HanSonghe Meng Jinghe WangWeitao Zheng |
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Affiliation: | a Center of Composite Materials, Harbin Institute of Technology, Post Box 1247, Xidazhi Street 92, Nangang, Harbin 150001, Chinab Precision Engineering Institute, Harbin Institute of Technology, Xidazhi Street 92, Harbin 150001, Chinac Department of Materials Science, Jilin University, Jiefang Road 119, Changchun 130023, China |
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Abstract: | The microstructure and surface morphology of ta-C films deposited on p-type (1 0 0) single crystal silicon with the substrate negative bias varying from 0 to 2000 V by the filtered cathodic vacuum arc technology have been investigated by means of Raman spectroscopy and atomic force microscope. The optimal deposition process of sp3-rich ta-C films can be confirmed in light of the relations between the coupling coefficients or full-width at half-maximum and the substrate negative bias. The surfaces of these films are uniform and smooth and RMS surface roughness is less than 0.4 nm. At the lower energetic grades, the more the content of sp3 is in the film, the smoother the surface of the film is. The dependence of the surface morphology and the impinging energy of the species can be illustrated according to the subimplantation growth mechanism. Nevertheless at the high energetic grade, the impinging ions with appropriate energy sputter and smoothen the surface so that the roughness might be even lower than the one of the films with the richest sp3 component. |
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Keywords: | Tetrahedral amorphous carbon (ta-C) Filtered cathodic vacuum arc (FCVA) Raman spectroscopy Surface morphology |
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