New transparent conductive films: FTO coated ITO |
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Authors: | Takuya Kawashima Hiroshi MatsuiNobuo Tanabe |
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Affiliation: | Electronics Material Department, Material Technology Laboratory, Fujikura Ltd., 1-5-1, Kiba, Koto-ku, Tokyo 135-8512, Japan |
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Abstract: | New transparent conductive films, fluorine doped tin oxide (FTO) films coated on indium-tin-oxide (ITO) films, were developed. These transparent conductive films were prepared by the spray pyrolysis deposition method at a substrate temperature of 350 °C in ITO and 400 °C in FTO. For ITO deposition, an ethanol solution of indium(III) chloride, InCl3·4H2O, and tin(II) chloride, SnCl2·2H2O Sn/(In+Sn), 5 at.%] was sprayed on a Corning #7059 glass substrate (100×100×1.1 mm3). After the deposition, FTO films were consecutively deposited for protecting oxidation of ITO films. FTO deposition was carried out by an ethanol solution of tin(IV) chloride, SnCl4·5H2O within the saturated water solution of NH4F. These new transparent conductive films achieved the lowest resistivity of 1.4×10−4 Ω cm and the optical transmittance of more than 80% in the visible range of the spectrum. The electrical resistance of these new transparent conductive films increased by less than 10% even when exposed to high temperatures of 300-600 °C for 1 h in the air. |
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Keywords: | Indium-tin-oxide Fluorine doped tin oxide Spray pyrolysis deposition Resistivity |
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