Structure of double interfaces system of Si3N4/SiO2/Si irradiated by γ-rays |
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Authors: | Liu Changshi |
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Affiliation: | Department of Physics, Shaoxing University, 312000 Shaoxing, Zejiang, People's Republic of China |
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Abstract: | The interfacial structures of double interfaces system of Si3N4/SiO2/Si were examined using X-ray photoelectron spectroscopy (XPS) before and after 60Co radiation. The experimental results demonstrate that there existed two interfaces, one consisted of Si3N4 and SiO2, while another was made of Si and SiO2, the interface between SiO2 and Si was extended towards the interface of the Si3N4/SiO2 meanwhile the center of the former interface was removed in the direction of the latter interface by 60Co. The concentration of silicon in the Si3N4 state (BE 101.8 eV) was decreased with the variation of radiation dosage as well as bias field within the SiO2-Si interface, remarkably. The mechanism for the experimental results is analyzed. |
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Keywords: | XPS Si3N4 SiO2-Si Silicon Si3N4 state Dosage Bias field |
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