Structure of double interfaces system of Si3N4/SiO2/Si irradiated by γ-rays

The interfacial structures of double interfaces system of Si₃N₄/SiO₂/Si were examined using X-ray photoelectron spectroscopy (XPS) before and after ⁶⁰Co radiation. The experimental results demonstrate that there existed two interfaces, one consisted of Si₃N₄ and SiO₂, while another was made of Si and SiO₂, the interface between SiO₂ and Si was extended towards the interface of the Si₃N₄/SiO₂ meanwhile the center of the former interface was removed in the direction of the latter interface by ⁶⁰Co. The concentration of silicon in the Si₃N₄ state (BE 101.8 eV) was decreased with the variation of radiation dosage as well as bias field within the SiO₂-Si interface, remarkably. The mechanism for the experimental results is analyzed.