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Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction

Authors:	Wei Wensheng Wang TianminZhang Chunxi Li GuohuaLi Yuexia

Affiliation:	^a Center of Material Physics & Chemistry, School of Science, Beijing University of Aeronautics & Astronautics, Beijing 100083, China ^b Institute of Optic-electronics, Beijing University of Aeronautics & Astronautics, Beijing 100083, China ^c National Key Lab. For Semiconductor Superlattice & Microstructure, Institute of Semiconductor, Chinese Academy of Science, Beijing 100083, China

Abstract:	Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/(p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode.

Keywords:	nc-Si:H film (p)nc-Si:H/(n)c-Si heterojunction variable capacitance diode
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