Thin films of iron oxide by low pressure MOCVD using a novel precursor: tris(t-butyl-3-oxo-butanoato)iron(III) |
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Authors: | K Shalini G.N SubbannaS Chandrasekaran S.A Shivashankar |
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Affiliation: | a Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India b Department of Organic Chemistry, Indian Institute of Science, Bangalore 560 012, India |
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Abstract: | Deposition of thin films of iron oxide on glass has been carried out using a novel precursor, tris(t-butyl-3-oxo-butanoato)iron(III), in a low-pressure metalorganic chemical vapor deposition (MOCVD) system. The new precursor was characterized for its thermal properties by thermogravimetry and differential thermal analysis. The films were characterized by X-ray diffraction (XRD), transmission electron microscopy, scanning electron microscopy, and by optical measurements. XRD studies reveal that films grown at substrate temperatures below ∼550 °C and at low oxygen flow rates comprise only the phase Fe3O4 (magnetite). At higher temperatures and at higher oxygen flow rates, an increasing proportion of α-Fe2O3 is formed along with Fe3O4. Films of magnetite grown under different reactive ambients—oxygen and nitrous oxide—have very different morphologies, as revealed by scanning electron microscopic studies. |
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Keywords: | Chemical vapor deposition Iron oxide Thin films Metalorganic |
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