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Rigorous analysis of the electronic properties of InP interfaces for gas sensing |
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| Authors: | B Adamowicz M MiczekC Brun B GruzzaH Hasegawa |
| Affiliation: | a Department of Microelectronics, Institute of Physics, Silesian University of Technology, Krzywoustego 2, Gliwice 44-100, Poland b LASMEA, Blaise Pascal University, Aubiere, Cedex 63177, France c Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060-8628, Japan |
| Abstract: | A theoretical analysis of the surface Fermi level position (EFS) at n-InP interfaces with different surface state density (NSS(E)) and surface fixed charge (QFC) representing adsorbed ions or surface δ-doping has been performed in order to understand the InP-based gas sensor behaviour. Furthermore, the in-depth profiles of the potential barrier in equilibrium and under illumination (surface photovoltage) have been rigorously calculated. A U-shaped interface state continuum has been assumed in accordance with the Disorder Induced Gap State model. From the simulated dependencies of EFS vs. the minimum surface state density NSS0, the movement of EFS in the energy band gap as well as its pinning position have been investigated. In addition, the analysis of the EFS sensitivity to the negative and positive QFC has revealed the remarkable charge detection sensitivity of InP interfaces within different dynamic ranges. |
| Keywords: | InP Interfaces Electronic properties Surface states Fermi level Gas sensing |
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