Surface morphology effects of post-implantation annealing in thin amorphous films of the As-Se system |
| |
Authors: | T. Tsvetkova S. BalabanovE. Skordeva S. KitovaJ. Sielanko D. MaczkaJ. Zuk |
| |
Affiliation: | a Institute of Solid State Physics, Bulgarian Academy of Science, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgariab Central Laboratory of Photoprocesses, Bulgarian Academy of Science, Acad.G.Bonchev Str. Bl. 109, 1113 Sofia, Bulgariac Maria Curie-Sklodowska University, Pl. M.Curie-Sklodowskiej 1, Lublin, Poland |
| |
Abstract: | The effects of ion implantation and subsequent annealing on the surface morphology of thin amorphous chalcogenide films of the As-Se system have been studied. Ion implantation of nitrogen (N+) with an energy E=100 keV and high doses (typically D=1.1016 cm−2) has been carried out at room temperature. Subsequent thermal annealing treatments near the melting temperature (Tg∼160°C) have been performed leading to changes in the thin-film morphology, which are dependent on the As content and are best expressed for the As3Se2 films. Optical microscope photographs reveal details of the rippled surface exhibiting quasi-regular domain-like structure. The parameter λ, describing it, is dependent on the film thickness and grows with its increase. Thermal annealing near Tg also influences the diffuse optical reflectivity—it increases considerably while the interference features tend to disappear with the appearance of the rippled film surface structure and the effect is again greater for the thicker films. |
| |
Keywords: | Ion implantation Chalcogenide glasses Thin-film morphology |
本文献已被 ScienceDirect 等数据库收录! |
|