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Volterra级数在高频跨导线性度分析中的应用
引用本文:刘璐,王志华,李国林. Volterra级数在高频跨导线性度分析中的应用[J]. 固体电子学研究与进展, 2006, 26(4): 490-493,509
作者姓名:刘璐  王志华  李国林
作者单位:1. 清华大学电子工程系,北京,100084
2. 清华大学微电子所,北京,100084
基金项目:国家自然科学基金 , 国家重点基础研究发展计划(973计划)
摘    要:将Volterra级数用于分析工作于高频,含有源级负反馈电阻的CMOS跨导级的线性度,为了降低计算的复杂性,将CMOS跨导视为两个非线性子系统的级联,计算了跨导的IIP3。使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。并对仿真结果和计算结果进行了比较,测试结果验证了文中的结论。

关 键 词:跨导电路  线性度分析  Volterra级数展开
文章编号:1000-3819(2006)04-490-04
收稿时间:2005-02-20
修稿时间:2005-02-202005-06-29

The Application of Volterra Series in Linearity Analysis of High Frequency CMOS Transconductance
LIU Lu,WANG Zhihua,LI Guolin. The Application of Volterra Series in Linearity Analysis of High Frequency CMOS Transconductance[J]. Research & Progress of Solid State Electronics, 2006, 26(4): 490-493,509
Authors:LIU Lu  WANG Zhihua  LI Guolin
Affiliation:1.Department of Electronic Engineering, Tsinghua University, Beijing, 100084, CHN;2.Institute of Microelectronics, Tsinghua University, Beijing, 100084, CHN
Abstract:In this paper, the method of using Volterra series expansion to analyze the linearity of high frequency CMOS transconductance stage with source degeneration resistor is provided. In order to reduce the complexity of the analysis, the transconductance stage is treated as cascade connection of two nonlinear systems. The IIP3 (input referred third-order intercept point) of the transconductance stage is calculated. The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance. Comparison is made among analytical results, simulation results and measurement results.
Keywords:CMOS transconductance   linearity analysis   Volterra series expansion
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