| 高功率无铝半导体激光器 |
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| 引用本文： | 杨进华,张兴德,任大翠. 高功率无铝半导体激光器[J]. 半导体光电, 2000, 21(2): 80-84 |
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| 作者姓名： | 杨进华 张兴德 任大翠 |
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| 作者单位： | 长春光学精密机械学院高功率半导体激光国家重点实验室,长春,130022 |
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| 摘 要： | ＩｎＧａＡｓＰ／ＧａＡｓ激光器抑制暗线缺陷的形成，器件的突然失效及缓慢退化有所减少。研究表明，高功率无铝半导体激光器比有铝ＡｌＧａＡ／ＧａＡｓ激光器具有更高的可靠性。文章分析比较了高功率有铝和无铝半导体激光器的优缺点，介绍了波长为８０８ｎｍ的高功能无铝半导体激光器的发展及国内外目前的研究状况。
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| 关 键 词： | 半导体激光器 量子阱 砷化镓 铝 |
Al-free High Power Semiconductor Lasers |
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| YANG Jin-hua,ZHANG Xing-de,REN Da-cui. Al-free High Power Semiconductor Lasers[J]. Semiconductor Optoelectronics, 2000, 21(2): 80-84 |
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| Authors: | YANG Jin-hua ZHANG Xing-de REN Da-cui |
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| Abstract: | Study on comparison between AlGaAs/GaAs and InGaAsP/GaAs high power laser diodes indicates that Al-free lasers are more reliable due to a reduction of dark line defects,sudden failure and gradual degradation. In this presentation, the advantages of Al-free high power semiconductor lasers are discussed. The development of Al-free high power lasers emitted at 808 nm and the research situation both at home and abroad are introduced. |
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| Keywords: | semiconductor laser high power quantum well SCH |
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