| 金掺杂HgCdTe气相外延生长及二次离子质谱研究 |
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| 引用本文： | 王仍,焦翠灵,张莉萍.金掺杂HgCdTe气相外延生长及二次离子质谱研究[J].红外,2016,37(10):1-6. |
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| 作者姓名： | 王仍 焦翠灵 张莉萍 |
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| 作者单位： | 中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,中国科学院上海技术物理研究所 |
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| 基金项目： | 国家自然科学基金项目(61106097; 61204134; 11304335)；中国科学院三期创新项目(CX-26)；中国载人空间站工程(TGJZ800-2-RW024) |
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| 摘 要： | 通过气相外延技术生长了Au掺杂的Hg1-xCdxTe薄膜材料。利用傅里叶光谱仪和金相显微镜对外延材料进行了表征。通过二次离子质谱(Secondary Ion Mass Spectroscopy, SIMS)技术分析了Au在Hg1-xCdxTe外延层以及CdZnTe衬底中的纵向分布趋势。利用SIMS技术还分析了I、II族和VI、VII族杂质在Hg1-xCdxTe外延层以及CdZnTe衬底中的纵向分布趋势，发现衬底和外延层的过渡区具有吸杂作用。研究结果对提高探测器的性能具有指导意义。
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| 关 键 词： | Hg1-xCdxTe晶体 二次离子质谱 气相外延 Au掺杂 杂质 |
| 收稿时间： | 2016/8/19 0:00:00 |
| 修稿时间： | 2016/9/22 0:00:00 |
Study of Vapor Phase Epitaxy Growth of Au-doped Hg1-xCdxTe and its Secondary Ion Mass Spectrum |
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| wangreng,JIAO Cui-ling and ZHANG Li-ping.Study of Vapor Phase Epitaxy Growth of Au-doped Hg1-xCdxTe and its Secondary Ion Mass Spectrum[J].Infrared,2016,37(10):1-6. |
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| Authors: | wangreng JIAO Cui-ling and ZHANG Li-ping |
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| Affiliation: | Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, |
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| Abstract: | Au-doped Hg1-xCdxTe epitaxial layer materials were grown by using a vapor phase epitaxial method. The layer materials were characterized by a Fourier spectrometer and a metallographic microscope. The longitudinal distribution trend of Au in the Hg1-xCdxTe epitaxial layer and CdZnTe substrate was analyzed by Secondary Ion Mass spectrometry (SIMS). In addition, the longitudinal distribution trend of I and II impurities and VI and VII impurities in the Hg1-xCdxTe epitaxial layer and CdZnTe substrate was also analyzed by SIMS. It was found that the transition region between the substrate and the epitaxial layer can absorb the impurities. This result is of significance to the improvement of detectors in performance. |
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| Keywords: | Hg1-xCdxTe crystal secondary ion mass spectroscopy (SIMS) vapor phase epitaxial method Au-doped impurity |
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