| 功率MOSFET单粒子烧毁测试技术研究 |
| |
| 引用本文： | 曹洲,杨世宇,达道安. 功率MOSFET单粒子烧毁测试技术研究[J]. 真空与低温, 2004, 10(1): 21-25 |
| |
| 作者姓名： | 曹洲 杨世宇 达道安 |
| |
| 作者单位： | 兰州物理研究所,甘肃,兰州,730000 |
| |
| 摘 要： | 总结了2种单粒子烧毁测试方法.在非破坏性测试原理基础上,研制成功针对星用功率MOSFET的单粒子烧毁动态测试系统.系统在锎源单粒子效应实验装置调试通过.利用该系统,在HI-13串列加速器上初步完成了星用MOSFET单粒子烧毁验证实验.
|
| 关 键 词： | 单粒子烧毁(SEB) 功率MOSFET 测试方法 |
| 文章编号： | 1006-7086(2004)01-0021-05 |
| 修稿时间： | 2003-12-10 |
TESTING OF SINGLE EVENT BURNOUT INDUCED BY HEAVY ION IN POWER MOSFET |
| |
| CAO Zhou,YANG Shi-yu,DA Dao-an. TESTING OF SINGLE EVENT BURNOUT INDUCED BY HEAVY ION IN POWER MOSFET[J]. Vacuum and Cryogenics, 2004, 10(1): 21-25 |
| |
| Authors: | CAO Zhou YANG Shi-yu DA Dao-an |
| |
| Abstract: | Two test methods for Sing Event Burnout (SEB) have been reported in details. Based on analysis of the principle for nondestructive testing of single event burnout, the test equipment has been developed, and adjusted used by the system of ()~(252)Cf source. The SEB has been inspected for Power MOSFET by heavy ion supplied with HI-13 accelerator. |
| |
| Keywords: | single event burnout power MOSFET test methods |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
