Analysis of semiconductor microlasers with an equilateral triangleresonator by rate equations |
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Authors: | Yong-Zhen Huang Wei-Hua Guo Li-Juan Yu Hong-Bin Lei |
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Affiliation: | Inst. of Semicond., Acad. Sinica, Beijing; |
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Abstract: | Semiconductor microlasers with an equilateral triangle resonator (ETR) are analyzed by rate equations with the mode lifetimes calculated by the finite-difference time-domain technique and the Pade approximation. A gain spectrum based on the relation of the gain spectrum and the spontaneous emission spectrum is proposed for considering the mode selection in a wide wavelength span. For an ETR microlaser with a side length of about 5 μm, we find that single fundamental mode operation at about 1.55 μm can be obtained as the side length increases from 4.75 to 5.05 μm. The corresponding wavelength tuning range is 93 nm, and the threshold current is about 0.1 to 0.4 mA |
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