多阳极220 GHz倍频器单片设计

介绍了一款基于GaAs肖特基二极管单片工艺的220 GHz倍频器的设计过程以及测试结果。为提高输出功率，倍频器采用多阳极结构，8个二极管在波导呈镜像对称排列，形成平衡式倍频器结构。采用差异式结电容设计解决了多阳极结构端口散射参数不一致问题，提高了倍频器的转换效率和工作带宽。对设计的倍频器进行流片、装配和测试，测试结果显示：倍频器在204~234 GHz频率范围内，转化效率大于15%；226 GHz峰值频率下实现最大输出功率为90.5 mW，转换效率为22.6%。设计的220 GHz倍频器输出功率高，转化效率高，工作带宽大。

Design of 220 GHz frequency doubler MMIC with multi-anode structure

The designing process and measurement results of a 220 GHz frequency doubler based on monolithic GaAs Schottky barrier diode are introduced. Multi-anode structure is adopted in this frequency doubler to improve the output power. Eight anodes are mirror symmetrically arranged along the waveguide to form balanced structure. The conversion efficiency and operating bandwidth are improved by adopting various junction capacitances to suppress the difference of scattering parameters among wave ports. The designed frequency doubler is fabricated and measured. Measurement result shows that the conversion efficiency of frequency doubler is above 15% from 204 GHz to 234 GHz and a peak output power of 90.5 mW with conversion efficiency above 20% is demonstrated at 226 GHz. Finally, a 220 GHz frequency doubler with high output power, high conversion efficiency and wide operating bandwidth is realized by adopting multi-anode structure.