| SrBi2Ta2O9/LaNiO3异质结薄膜的铁电、磁性能及漏电流研究 |
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| 引用本文： | 李万朋,刘秋香.SrBi2Ta2O9/LaNiO3异质结薄膜的铁电、磁性能及漏电流研究[J].广东工学院学报,2014(2):117-120. |
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| 作者姓名： | 李万朋 刘秋香 |
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| 作者单位： | 广东工业大学物理与光电工程学院,广东广州510006 |
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| 基金项目： | 广东省自然科学基金资助项目（10151009001000050） |
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| 摘 要： | 采用溶胶凝胶方法在Si（100）衬底上生长了SrBi2Ta2O9/LaNiO3（SBT/LNO）异质结薄膜,其中SrBi2Ta2O9薄膜呈高度（115）取向.测量了不同退火温度下异质结的电滞回线和漏电流密度,结果表明,700℃下退火的薄膜剩余极化值最高,漏电流最低,且表现出弱的室温铁磁行为.漏电流机理分析表明薄膜界面为欧姆接触.
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| 关 键 词： | 钽酸锶铋 漏电流密度 铁电 铁磁 |
Ferroelectric,Magnetic Properties and Leakage Currents of SrBi2Ta2O9/LaNiO3 Heterostructure Thin Films |
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| Authors: | Li Wan-peng Liu Qiu-xiang |
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| Affiliation: | 1.School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou 510006, China;) |
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| Abstract: | SrBi2Ta2O9 （SBT）/LaNiO3 （LNO） heterostructure thin films were grown on Si （100） substrate by using a sol-gel process.XRD results reveal high （115） orientation of SrBi2Ta2O9 thin film.The hysteresis loops and leakage current density of the films annealed at different temperatures were measured.The film annealed at 700 ℃ showes the lowest leakage current density and a well saturated P-E hysteresis loop with the largest remnant polarization （Pr） of 7.16 uC/cm2.Leakage mechanism analysis suggests an Ohmic conduction.In addition,the SBT/LNO heterostructures annealed at 700 ℃ exhibit a weak roomtemperature ferromagnetic behavior. |
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| Keywords: | SrBi2Ta2O9 leakage current density ferroelectric ferromagnetic |
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