多线切割工艺中晶片翘曲度的控制

翘曲度是鉴别晶片几何参数好坏的重要指标之一.采用逐点扫描法对多线切割制备的晶片翘曲度分布进行了测量.通过对切割线张力、砂浆使用次数、切割速度等影响翘曲度的主要因素进行实验分析,阐述了产生的原因,并得出了翘曲度的分布规律.针对影响翘曲度的主要因素,根据其分布规律调整相应的切割工艺条件,可较好地控制晶片的翘曲度.虽是针对Si单晶加工中出现的实验情况进行分析,但该结论完全可用于Ge、GaAs等其他晶体的加工中.

Control of Wafer Warp in Multi-Wire Saw Process

Warp is one of the most important parameters of differentiating wafer geometry norm.For the wafers prepared by multi-wire saw process,the warp distribution was measured with multi-point scan.the primary factors influencing wafer warp(such as saw wire tension,times of slurry using and saw rate)were analyzed,the regular of warp distribution and the reasons of engendering warp were introduced.In allusion to the factors of affecting warp,by adjusting the process conditions of multi-wire saw,wafer warp were well...