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基于BCD工艺的单片热插拔控制集成电路设计
引用本文:吴晓波,张永良,章丹艳,严晓浪. 基于BCD工艺的单片热插拔控制集成电路设计[J]. 半导体学报, 2006, 27(5): 948-0
作者姓名:吴晓波  张永良  章丹艳  严晓浪
作者单位:浙江大学超大规模集成电路设计研究所,杭州 310027;浙江大学超大规模集成电路设计研究所,杭州 310027;浙江大学超大规模集成电路设计研究所,杭州 310027;浙江大学超大规模集成电路设计研究所,杭州 310027
基金项目:中国科学院资助项目 , 国家自然科学基金
摘    要:为保证系统在热插拔过程中安全工作,避免因之导致系统崩溃及系统与部件的损坏,提出一种热插拔控制芯片的设计.针对热插拔过程中可能产生的浪涌电流和过流、过压等故障现象,芯片设计中设置了多重保护功能,包括自动限制启动电流,过流时切断电路以及过压时断电,长时过压触发SCR为负载提供撬棒保护等.另外,设计了低压诊断、负载电压等检测功能.由于芯片工作中涉及较高电压和较大电流,电路采用BCD工艺(bipolar-CMOS-DMOS)实现,并对系统、电路和版图进行了优化.制得的芯片面积约为2.5mm×2.0mm,可在4.5~16.5V电压范围内正常工作,12.0V电源电压下芯片功耗约为18mW.对芯片的测试结果表明,所设计的电路功能和特性已成功实现.

关 键 词:热插拔  过流保护  过压保护  欠压锁定电路  BCD工艺  工艺  热插拔控制  集成电路设计  Technology  Controller  Swap  Monolithic  特性  检测功能  测试结果  芯片功耗  电源电压  范围  芯片面积  优化  版图  大电流  高电压  工作  负载电压
文章编号:0253-4177(2006)05-0948-07
收稿时间:2005-07-15
修稿时间:2005-11-28

Design of a Monolithic Hot Swap Controller IC with BCD Technology
Wu Xiaobo,Zhang Yongliang,Zhang Danyan and Yan Xiaolang. Design of a Monolithic Hot Swap Controller IC with BCD Technology[J]. Chinese Journal of Semiconductors, 2006, 27(5): 948-0
Authors:Wu Xiaobo  Zhang Yongliang  Zhang Danyan  Yan Xiaolang
Affiliation:Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China;Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China;Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China;Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China
Abstract:To avoid the faults arising from hot board insertion,which may lead to the damage of the board and the backplane and even give rise to the collapse of the system in the worst-case scenario,a hot swap controller IC is developed to ensure the safe insertion and removal of a circuit board from a live backplane.To prevent over current/over voltage and surge current faults,multi protections for both the board and backplane,including a limit on the automatic starting current, a circuit breaker that triggers in the event of over current faults,and the driving of an SCR crowbar to protect the loads in the event of over input voltage faults,are proposed and realized.The under-voltage detecting and output voltage monitoring are also available for its use.After the optimization of the system,circuit,and layout design,the IC is realized in BCD (bipolar-CMOS-DMOS) technology,which is able to operate under a very high voltage and drive current.The chip area is about 2.5mm×2.0mm.It works normally under the range of 4.5 to 16.5V and consumes 18mW at 12.0V.The test results show that the expected functions are achieved and main features meet the requirements well.
Keywords:hot swap  over-current protection  over-voltage protection  UVLO  BCD technology
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