Electrical characteristics of TiB2 for ULSI applications |
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| Authors: | Choi CS Wang Q Osburn CM Ruggles GA Shah AS |
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| Affiliation: | Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC; |
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| Abstract: | The work function of TiB2 was measured using Fowler-Nordheim tunneling in MOS capacitors, Schottky diode current measurements, capacitance-voltage techniques, and contact resistance. The resulting data place the Fermi level of TiB2 about 0.9 eV below the silicon conduction band. Given this barrier height, Schottky diodes of TiB2/p-Si exhibit ohmic characteristics, but the contact resistance of TiB2 to n+ junctions is an order of magnitude higher than the generally desired value. Boron outdiffusion from TiB2 into underlying silicon was observed at temperatures of 1000°C and greater. Boron diffusion from TiB2 into silicon above 1000°C is enhanced compared to the conventionally accepted value of the boron diffusivity |
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