| PLD法生长硅基ZnO薄膜的特性 |
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| 引用本文： | 何建廷,庄惠照,薛成山,王书运.PLD法生长硅基ZnO薄膜的特性[J].电子元件与材料,2005,24(5):24-26. |
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| 作者姓名： | 何建廷 庄惠照 薛成山 王书运 |
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| 作者单位： | 山东师范大学物理与电子科学学院半导体研究所,山东,济南,250014;山东师范大学物理与电子科学学院半导体研究所,山东,济南,250014;山东师范大学物理与电子科学学院半导体研究所,山东,济南,250014;山东师范大学物理与电子科学学院半导体研究所,山东,济南,250014 |
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| 摘 要： | 用脉冲激光沉积法(PLD)在n型硅(111)平面上生长ZnO薄膜。XRD在2θ为34°处出现了唯一的衍射峰,半高宽仅0.85°;傅里叶红外吸收(FTIR)在413.08cm–1附近出现了对应Zn—O键的红外光谱的特征吸收峰;光致发光(PL)测量发现了位于330,368,417和467nm处的室温光致发光峰;SEM和TEM显示了薄膜的表面形貌以及结晶程度。ZnO单晶薄膜具有c轴取向高度一致的六方纤锌矿结构。
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| 关 键 词： | 半导体技术 ZnO薄膜 PLD 六方纤锌矿结构 |
| 文章编号： | 1001-2028(2005)05-0024-03 |
Characteristics of Zinc Oxide Thin Films on Silicon(111) by Pulsed Laser Deposition |
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| HE Jian-ting,ZHUANG Hui-zhao,XUE Cheng-shan,WANG Shu-yun.Characteristics of Zinc Oxide Thin Films on Silicon(111) by Pulsed Laser Deposition[J].Electronic Components & Materials,2005,24(5):24-26. |
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| Authors: | HE Jian-ting ZHUANG Hui-zhao XUE Cheng-shan WANG Shu-yun |
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| Abstract: | ZnO thin film was deposited on n-Si(111) substrates by PLD. XRD showed that there was only one sharp diffraction peak at 2θ=34° with the full width at the half maximum (FWHM) of 0.85°. FTIR presented a intensely cliffy absorption peak resulted from Zn-O bonds. PL gave four emission peaks, corresponding to the wavelength of 330, 368, 417 and 467 nm. SEM and TEM were employed to analyze the morphology and crystal degree of ZnO thin film. ZnO thin film has a good c-axis preferred orientation and a single-crystal hexagonal wurtzite structure. |
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| Keywords: | PLD |
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