（Ba1—xSrx）TiO3薄膜的制备及性能的研究

选用Ba(C2H3O2)2、Sr(C2H3O2)2.1/2H2O和Ti（OC4H9）4为原材料，冰醋酸为催化剂，乙二醇乙醚为溶剂。用改进的溶胶－凝胶技术在Pt/Ti/SiO2/Si基片上成功地制备出钙钛型结构的（Ba1-xSrx)TiO3薄膜。该薄膜是制备铁电动态随机存储器、微波电容和非致冷红外焦平面阵列的优选材料；分析了薄膜的结构；测试了薄膜的介电和铁电性能。在室温10kHz下，（Ba0.73Sr0.27)TiO3薄膜介电系数和损耗分别为300和0．03。在室温1kHz下，（Ba0.95Sr0.05)TiO3薄膜剩余极化强度的矫顽场分别为3μC／cm^2和50kV/cm。

The Preparation andProperties of

（Ba1-xSrx）TiO3（BST）ferroelectric thin films with perovskitestructure on Pt／Ti／SiO2／Si substrate have been prepared by improved Sol-Gel technique．Barium acetate，strontium acetate and tetrabutyl tianate are used raw materials．Glacial acetic acid is used as a catalyst．Ethylene glycol monoethyl ether is used as a solvent．（Ba1-xSrx）TiO3 thin films are excellent materials for preparing ferroelectric dynamic random access memory，microwave capacitors and uncooled infrared focal plane arrays．The dielectric and ferroelectric properties of （Ba1-xSrx）TiO3 thin films were measured．The εr and tan δ of（Ba0.73Sr0.27）TiO3 thin films are 300 and 0.03，respectively，at room temperature and 10 kHz The Pr and Ec of （Ba0.95Sr0.05）TiO3 thin films are 3 μC／cm2 and 50 kV／cm，respectively，at room temperature and 1 kHz.