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Characteristics of island growth of Hg1−xCdx Te on (100) CdTe substrates by chemical vapor transport
Authors:Yu-Ru Ge  Heribert Wiedemeier
Affiliation:(1) Department of Chemistry, Rensselaer Polytechnic Institute, 12180-3590 Troy, NY
Abstract:The characteristics of island growth of Hg1−xCdxTe (MCT) by chemical vapor transport on (100) CdTe substrates have been studied, for the first time, by optical microscopy, by infrared transmission spectroscopy, and by chemical etching. Nonuniformities of the growth thickness, of the growth rate, and of the composition of islands are observed. Based on the experimental results, the origin and the inhibition of island growth of MCT on (100) CdTe substrates are discussed.
Keywords:Chemical vapor transport (CVT)  HgCdTe  island growth
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