Solid-phase reactions of Ta2O5 with Ga2O3 and In2O3

Conclusions Using the techniques of DTA and x-ray phase analysis, a study was made of the reactions between Ta₂O₅ and M₂O₃ (M = Ga or In), and the phase compositions of the relevant binary systems were determined. The existence was confirmed of stable compounds of composition MTaO₄ and eutectoidally decomposing phases containing 7.5–12.5 mole % M₂O₃. MTaO₄ are dielectrics, whose room-temperature _v is of the order of 10¹⁰ -cm. The temperature dependence of _v of MTaO₄ was investigated in the range 293–873°K and their energies of activation for conductivity were calculated. The melting points, pyknometric densities, dielectric losses, and relative dielectric permeabilities of MTaO₄ were determined.Translated from Poroshkovaya Metallurgiya, No. 2 (110), pp. 69–73, February, 1972.