A surface-potential-based model for AlGaN/AlN/GaN HEMT |
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| Authors: | Wang Jie Sun Lingling Liu Jun and Zhou Mingzhu |
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| Affiliation: | Wang Jie;Sun Lingling;Liu Jun;Zhou Mingzhu;Department of Electrical Engineering,Zhejiang University;Key Laboratory of RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University; |
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| Abstract: | A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor (HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas (2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model. |
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| Keywords: | AlGaN/AlN/GaN HEMT 2DEG surface potential polarization effects mobility |
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