| 一种单材料双功函数栅MOSFET解析模型 |
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| 作者姓名： | Zheng Changyong Zhang Wei Xu Tailong Dai Yuehu Chen Junning |
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| 作者单位： | School of Electronics and Information Engineering,Anhui University;Key Laboratory of Intelligent Building of Anhui Province,Anhui University of Architecture |
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| 基金项目： | 国家自然科学基金青年项目资助(No. 61006064) |
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| 摘 要： | An analytical surface potential model for the single material double work function gate(SMDWG) MOSFET is developed based on the exact resultant solution of the two-dimensional Poisson equation. The model includes the effects of drain biases, gate oxide thickness, different combinations of S-gate and D-gate length and values of substrate doping concentration. More attention has been paid to seeking to explain the attributes of the SMDWG MOSFET, such as suppressing drain-induced barrier lowering(DIBL), accelerating carrier drift velocity and device speed. The model is verified by comparison to the simulated results using the device simulator MEDICI. The accuracy of the results obtained using our analytical model is verified using numerical simulations. The model not only offers the physical insight into device physics but also provides the basic designing guideline for the device.
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| 关 键 词： | analytical model surface potential single material double work function gate(SMDWG) MOSFET simulation DIBL |
| 收稿时间： | 2/4/2013 12:00:00 AM |
| 修稿时间： | 3/7/2013 12:00:00 AM |
A compact model for single material double work function gate MOSFET |
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| Zheng Changyong,Zhang Wei,Xu Tailong,Dai Yuehu,Chen Junning.A compact model for single material double work function gate MOSFET[J].Chinese Journal of Semiconductors,2013,34(9):094006-5. |
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| Authors: | Zheng Changyong Zhang Wei Xu Tailong Dai Yuehua and Chen Junning |
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| Affiliation: | Zheng Changyong;Zhang Wei;Xu Tailong;Dai Yuehua;Chen Junning;School of Electronics and Information Engineering,Anhui University;Key Laboratory of Intelligent Building of Anhui Province,Anhui University of Architecture; |
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| Abstract: | An analytical surface potential model for the single material double work function gate (SMDWG) MOSFET is developed based on the exact resultant solution of the two-dimensional Poisson equation. The model includes the effects of drain biases, gate oxide thickness, different combinations of S-gate and D-gate length and values of substrate doping concentration. More attention has been paid to seeking to explain the attributes of the SMDWG MOSFET, such as suppressing drain-induced barrier lowering (DIBL), accelerating carrier drift velocity and device speed. The model is verified by comparison to the simulated results using the device simulator MEDICI. The accuracy of the results obtained using our analytical model is verified using numerical simulations. The model not only offers the physical insight into device physics but also provides the basic designing guideline for the device. |
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| Keywords: | analytical model surface potential single material double work function gate (SMDWG) MOSFET simulation DIBL |
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