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高压P-i-N二极管关断瞬态综合失效机理分析
引用本文:罗皓泽,李武华,何湘宁.高压P-i-N二极管关断瞬态综合失效机理分析[J].电工技术学报,2016(20):161-169.
作者姓名:罗皓泽  李武华  何湘宁
作者单位:浙江大学电气工程学院杭州 310027
基金项目:国家重点基础研究发展计划(973计划)资助项目(2014CB247400)。
摘    要:针对商用高电压大功率多芯片P-i-N二极管在钳位型电感负载电路中,在额定电气参数下发生的瞬态失效现象,分别从电路布局和器件机理层面讨论了各因素对二极管芯片失效的作用影响。首先,通过考察二极管模块内部失效芯片的位置和故障波形,得出整个电力电子装置的可靠性是由失效风险最高的局部芯片决定而非由功率模块的坚固性决定。其次,根据二极管芯片在深度动态雪崩情况下所产生丝状电流的现象,得出由芯片电流密度不均所引发的结温-电流密度正反馈机制是导致多芯片功率模块失效的最终原因。最后,根据失效表征与测试条件,提出了由综合失效诱因导致的多芯片模块动态失效新模式。结论表明本文讨论的大功率多芯片模块所发生的失效现象,是多失效诱因综合作用所引发的,而非单一因素超限的结果。

关 键 词:大功率电力电子器件  电流密度不均  瞬态热失控  雪崩击穿  综合失效机理

Comprehensive Failure Mechanisms in High Voltage P-i-N Diode During Turn-off Transient
Abstract:In this paper, the turn-off transient failure of commercial high voltage multi-chip P-i-N diode under the rated parameters in clamped circuit is discussed from the circuit layout aspect and semiconductor mechanism aspect. Firstly, through the failure chips and failure waveforms, it is proved that the riskiest chip instead of the modules determines the reliability of power converter system. Besides, according to the filament current phenomenon of P-i-N diode under the deepest dynamic avalanche, the impact of local over temperature induced by the unbalanced current distribution is discussed. It is concluded that the failure mechanism of P-i-N is the positive feedback of thermoelectric coupling mechanism. Finally, based on the failure results and test conditions, the comprehensive failure mechanisms of power device are proposed. It is shown that the failure mechanisms are not induced by one single factor but the combined effects of all related factors.
Keywords:High power modules  non-uniform current distribution  transient hot runaway  avalanche  comprehensive failure mechanism
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