Co-doping method used to improve the charge transport balance in solution processed OLEDs |
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| Authors: | HU Jun-tao WANG Peng XIAO Xue HU Sheng XU Kai and WANG Xiang-hua |
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| Affiliation: | National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China,National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China;School of Instrument Science and Opto-electronics Engineering, Hefei University of Technology, Hefei 230009, China,National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China;School of Instrument Science and Opto-electronics Engineering, Hefei University of Technology, Hefei 230009, China,National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China;School of Instrument Science and Opto-electronics Engineering, Hefei University of Technology, Hefei 230009, China,National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China and National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China |
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| Abstract: | In this paper, co-doping method is used to improve the current efficiency of solution-processed organic light-emitting diodes (OLEDs). By changing the ratio of two thermally activated delayed fluorescent (TADF) emitters, we studied the performance of device and its mechanism. A solution processed OLED with a structure of indium tin oxide (ITO, 150 nm)/PEDOT:PSS (30 nm)/CBP:4CzIPN-x%:4CzPN-y% (30 nm)/TPBi (40 nm)/LiF (1 nm)/Al (100 nm) was fabricated. The current efficiencies of 26.6 cd/A and 26.4 cd/A were achieved by the devices with dopant ratio of 6% 4CzIPN:2% 4CzPN and 2% 4CzIPN:6% 4CzPN in emitting material layer (EML), respectively. By investigating the tendency of current density change in devices with different doping ratio, we suggested that the enhancement of the current efficiency should be due to the charge transport balance improvement induced by assist dopant in EML. |
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