| 纳米级MOSFET器件模拟的载流子输运模型 |
| |
| 引用本文： | 蒲月皎,刘丕均,张亚非,王印月. 纳米级MOSFET器件模拟的载流子输运模型[J]. 固体电子学研究与进展, 2005, 25(2): 160-166 |
| |
| 作者姓名： | 蒲月皎 刘丕均 张亚非 王印月 |
| |
| 作者单位： | 上海交通大学薄膜与微细加工教育部重点实验室,微纳米科学技术研究院,上海,200030;兰州大学物理科技学院,兰州,730000;上海交通大学薄膜与微细加工教育部重点实验室,微纳米科学技术研究院,上海,200030;兰州大学物理科技学院,兰州,730000 |
| |
| 基金项目： | 上海市科技发展基金(0215nm030)资助项目 |
| |
| 摘 要： | 随着半导体微细加工技术的发展,预计硅SOC的集成度可达万亿个晶体管,单个晶体管的尺寸将达到10nm范围内。因此从理论上研究纳米尺寸器件的性能和特性对发展超大规模集成电路尤为重要。综述了纳米级MOSFET器件数值模拟的量子模型,以及在该模型下用到的几种载流子输运模型,并结合模拟结果对这一模型作了评价。
|
| 关 键 词： | 器件模拟 量子传输 纳米级金属氧化物半导体场效应管 弹道传输 |
| 文章编号： | 1000-3819(2005)02-160-07 |
| 修稿时间： | 2003-05-09 |
The Carrier Transport Model of Nano-Scale MOSFET Device Simulation |
| |
| PU Yuejiao,LIU Pijun,ZHANG Yafei,WANG Yinyue. The Carrier Transport Model of Nano-Scale MOSFET Device Simulation[J]. Research & Progress of Solid State Electronics, 2005, 25(2): 160-166 |
| |
| Authors: | PU Yuejiao LIU Pijun ZHANG Yafei WANG Yinyue |
| |
| Affiliation: | PU Yuejiao~1,2 LIU Pijun1 ZHANG Yafei1 WANG Yinyue2 |
| |
| Abstract: | During the progress of semiconductor micro fabrication technology, the VLSI technology requires that the characteristic scale of semiconductor device will be further reduced. The silicon technology has an enormous remaining potential to achieve terascale integration(TSI) of more than 1 trillion transistors per chip. In this case, the scale of transistor will reach 10-nm range. It is very important to study the characteristic and capability of nanodevice for the development of VLSI technology. In this article, we have reviewed the numerical simulation of nano-scale MOSFET in the theory framework of quantum transport model, moreover, several models of carrier transport under this model have been discussed. We also evaluate the result from these models. |
| |
| Keywords: | device simulation quantum transport nano-scale MOSFET ballistic transport |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
