| 硅抛光片表面质量测试技术综述 |
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| 引用本文： | 宋晶,杨洪星,张伟才,武永超. 硅抛光片表面质量测试技术综述[J]. 电子工业专用设备, 2010, 39(7): 9-10,38 |
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| 作者姓名： | 宋晶 杨洪星 张伟才 武永超 |
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| 作者单位： | 中国电子科技电集团公司第四十六研究所,天津,300220 |
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| 摘 要： | 随着硅抛光片尺寸逐渐增大,硅抛光片表面质量测试逐步被人们所关注。表面金属离子含量以及表面颗粒度成为衡量硅抛光片表面质量的重要指标,对表面金属离子含量以及表面颗粒度的测试原理以及设备进展进行了介绍。
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| 关 键 词： | 硅 表面颗粒度 全反射荧光谱 |
Review of Measurement Technology on Surface Quality for Silicon Polished Wafers |
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| SONG Jing,YANG Hongxing,ZHANG Weicai,WU Yongchao. Review of Measurement Technology on Surface Quality for Silicon Polished Wafers[J]. Equipment for Electronic Products Marufacturing, 2010, 39(7): 9-10,38 |
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| Authors: | SONG Jing YANG Hongxing ZHANG Weicai WU Yongchao |
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| Affiliation: | SONG Jing,YANG Hongxing,ZHANG Weicai,WU Yongchao(The 46th Research Institute,CETC,TianJin 300220,China) |
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| Abstract: | The measurement technology for silicon polished wafers had been widely concerned as the diameter of silicon polished wafers gradually enlarged.Surface metal ion concentration and surface particle level had become the important parameters which appraised the surface quality of the silicon polished wafers.The measurement principle and equipment progress were introduced in the article. |
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| Keywords: | Silicon Surface Particle Level TXRF |
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