二维半导体红外光电探测器研究进展（特邀）

红外探测在生物医疗、智慧城市、宇宙探索等前沿领域中有着重要的作用。近年来，以二维材料为代表的新型纳尺度半导体并以此形成的具有颠覆性意义的光电探测技术在探测灵敏度、极低暗电流、高工作温度等指标超越了传统薄膜器件的理论极限，是新一代红外光电探测技术有力竞争者之一。文中以局域场调控实现室温高性能光电探测为出发点，介绍了铁电局域场、层间内建电场、面内内建电场调控二维材料光电探测机理与器件实现方法；进一步，针对二维材料其尺寸效应引起的光利用率低或量子效率低的问题，提出了单边异质结和表面等离子激元增强结构的光电性能增强方法；最后列举了二维半导体材料在红外探测器领域的应用探索，展现了新型二维半导体红外探测器的应用潜力与前景，为新一代红外探测器技术提供了新方法和新思路。

Research progress of two-dimensional semiconductor infrared photodetector (Invited)

Infrared detection plays an important role in cutting-edge fields such as biomedicine, smart cities, and space exploration. In recent years, a new type of nanoscale semiconductor represented by two-dimensional materials is one of the candidates for a new generation of infrared photodetection technology. This is due to the fact that some index of two-dimensional materials device have exceeded the theoretical limits of traditional thin-film devices, such as detection sensitivity, ultralow dark current, high working temperature, etc. Two dimensional materials can easily be controlled by local field. In this review, the mechanism of three local fields to achieve high performance at room temperature were introduced in the first part, including ferroelectric local field, the interlayer built-in electric field, and the in-plane built-in electric field. Secondly, we introduced the photoelectric enhancement methods of unilateral depletion heterojunction and surface plasmon structure to solve the problem of low quantum efficiency and low light absorption caused by atomic thin effect of two-dimensional materials. Finally, we showed some applications of two-dimensional materials in infrared photodetection field. The exploration reveals the potential and prospect of the novel two-dimensional semiconductor in the field of infrared photodetection, which provides some new methods and ideas for the new generation infrared detector technology.