GaN基多量子阱红外探测器研究进展（特邀）

多量子阱红外探测器是一种新型的利用子带跃迁机制的探测器件，具有非常高的设计自由度。GaN/Al(Ga)N量子阱由于大的导带带阶，超快的电子驰豫时间，超宽的红外透明区域以及高的声子能量，使得其成为继GaAs量子阱红外探测器之后又一潜在的探测材料结构。文中详细综述了国内外关于GaN基量子阱红外子带吸收及其探测器件的研究进展。首先介绍了量子阱红外探测器的工作原理及其选择定则，接着从极性GaN基多量子阱、非极性或半极性GaN基多量子阱以及纳米线结构GaN基多量子阱三个方面回顾当前GaN基多量子阱红外吸收的一些重要研究进展，包括了从近红外到远红外甚至太赫兹波段范围的各种突破。最后回顾了GaN基多量子阱红外探测器件的研究进展，包括其光电响应特性和高频响应特性，并对其未来的发展进行总结和展望。

Recent progress of GaN based quantum well infrared photodetector (Invited)

Quantum well infrared photodetector (QWIP) is a new device utilizing the intersubband transition in conduction band or valance band, which has a very high free degree of device design. Due to the large conduction band-offset, the ultrafast electron relax time, the ultra-wide infrared transparency and the high energy LO-phonon, the GaN/Al(Ga)N multi-quantum wells (MQWs) has become a potential candidate for the infrared detector since the GaAs based MQWs. In this paper, the research progresses of intersubband transition absorption (ISBT) and corresponding photoresponse of GaN based MQWs were systematically reviewed. First, the operation principle and the selection rule of the quantum well infrared photodetector was explained. Then, the main research work was introduced including the ISBT absorption of polar, nonpolar and nanowire GaN based MQWs, from the near infrared to far infrared, even the THz range. Finally, the progress of GaN based QWIP and quantum cascade detectors (QCD) was reviewed including the photofresponse and the frequency response of the device. A conclusion and perspective was presented for the future research in GaN based QWIP and QCDs.