高性能锑化物超晶格中红外探测器研究进展（特邀）

中红外探测技术作为一种重要的被动探测手段，在各个领域都有着非常重要的作用。其中，以InAs/InAsSb超晶格材料为基础的无Ga型Sb化物II类超晶格探测器，由于去除了Ga原子的缺陷，具有更高的少子寿命，有利于提高探测器性能。此外，使用光子晶体结构，进行表面光学性能调控，可以提高器件的响应度，从而降低材料吸收区厚度，降低器件暗电流。暗电流的降低和响应度的提升，进一步优化了探测器的性能，进而提高器件工作温度，进一步降低探测系统的体积、重量和功耗。研究表明:使用光子晶体结构可以在不改变外延材料结构的前提下，提高器件量子效率，实现响应光谱的展宽，在实际应用中具有重要的意义。文中综述和讨论了InAs/InAsSb超晶格探测器和光子晶体结构探测器材料生长、结构设计的主要技术问题，详细介绍了两种提高中红外探测器性能的方案及国内外的研究进展。

Research progress of high performance Sb-based superlattice mid-wave infrared photodetector (Invited)

In recent year, mid-wave infrared detection technology has rapid development, and plays an important role in variable applications. Among different kinds of mid-infrared detectors, Ga-free InAs/InAsSb type II superlattice (T2 SL) detectors have the potential to achieve higher minority carrier lifetime and higher performance due to the removal of Ga-related defects. The application of photonic crystals is another way to improve the performance of detectors by optical control, such as the improvement of responsibility and the decrease of the dark current. With higher responsibility and lower dark current, the detector can have higher operating temperature, which results in low Size, Weight and Power (SWaP). At the same time, the photonic crystals can also realize the optimization of optical performance such as broadband spectrum responsibility without changing the material structure. The material growth and device design of InAs/InAsSb T2 SL detectors and photonic crystal structure detectors were reviewed and discussed in this paper. Two methods to improve the performance and the progress of mid-wave infrared detectors were introduced in detail.